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940 nm High Radiant Emitters Technical Data
HEMT-3301 HEMT-1001
Features
* Nonsaturating, High Radiant Flux Output * Efficient at Low Currents, Combined with High Current Capability * Three Package Styles * Operating Temperature Range -55C to +100C * Medium-Wide Radiation Patterns * Radiated Spectrum Matches Response of Silicon Photodetectors
Description
The HEMT-3301 and HEMT-1001 are infrared emitters, using a mesa structure GaAs on GaAs infrared diode, IRED, optimized for maximum quantum efficiency at a peak wavelength of 940 nm. The HEMT-3301 and HEMT-1001 emitters are untinted, undiffused plastic packages with mediumwide radiation patterns. These
medium-wide and wide radiation patterns eliminate the beam focusing problems that are encountered with emitters that have narrow radiation patterns. Applications include optical transducers, optical part counters, smoke detectors, covert identification, paper tape and card readers, and optical encoders.
Package Dimensions
2
Absolute Maximum Ratings at TA = 25C
Power Dissipation .................................................................... 150 mW DC Forward Current .................................................................. 100 mA (Derate as specified in Figure 6) Peak Forward Current ............................................................. 1000 mA (Time average current as determined from Figure 7) IRED Junction Temperature ........................................................ 110C Operating and Storage Temperature ........................... -55C to +100C Lead Soldering Temperature .................................. 260C for 5 seconds (1.6 mm (0.063 in.) from emitter body)
Electrical/Optical Characteristics at TA = 25C
Symbol Ie Ie/T /T PEAK 21/2 Description Radiant Intensity HEMT-3301 HEMT-1001 Temperature Coefficient for Radiant Intensity[1] Temperature Coefficient for Peak Wavelength[2] Peak Wavelength Half Intensity[3] Total Angle HEMT-3301 HEMT-1001 Output Rise Time (10% to 90%) Output Fall Time (90% to 10%) Capacitance Reverse Breakdown Voltage Forward Voltage Thermal Resistance HEMT-3301 HEMT-1001 Min. 2.5 1.0 Typ. 4.0 2.0 -0.58 0.3 940 Max. Units mW/sr %/C nm/C nm Test Conditions IF = 20 mA Measured at PEAK Measured at PEAK Measured at PEAK Fig. 4, 5 1 1 1
tr tf C VR VF RJ-PIN
50 60 1700 700 30 5.0 1.30 1.15 260 290 1.50
deg. ns ns pf V V
IF = 20 mA IPEAK = 20 mA IPEAK = 20 mA VF = 0; f = 1 MHz IR = 10 A IF = 100 mA IF = 20 mA IRED Junction to to Cathode Lead
8 9
2
C/W
Notes: 1. Radiant intensity at ambient temperature Ie(TA ) = Ie(25C) + (Ie/T) (TA - 25C)/100. 2. Peak wavelength at ambient temperature: PEAK(TA ) = PEAK(25C) + (/T) (TA - 25C). 3. 1/2 is the off-axis angle from emitter centerline where the radiant intensity is half the on-axis value. 4. Approximate radiant flux output within a cone angle of 2: e(2) = [e()/I e(0)] Ie (TA); e()/Ie(0) obtained from Figure 8 or 9.
3
Figure 1. Radiated Spectrum.
Figure 2. Forward Current vs. Forward Voltage.
Figure 3. Forward Voltage Temperature Coefficient vs. Forward Current.
Figure 4. Relative Radiant Intensity vs. DC Forward Current.
Figure 5. Relative Efficiency vs. Peak Forward Current.
Figure 6. Maximum DC Forward Current vs. Ambient Temperature. Derating Based on T JMAX = 110C.
Figure 7. Maximum Tolerable Peak Current vs. Peak Duration (IPEAK MAX Determined from Temperature Derated IDC MAX).
Figure 8. Far Field Radiation Pattern, HEMT-3301.
www.semiconductor.agilent.com Figure 9. Far Field Radiation Pattern, HEMT-1001. Data subject to change. Copyright (c) 1999 Agilent Technologies, Inc. Obsoletes 5954-8473E 5964-3813E (11/99)

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